• DocumentCode
    3596641
  • Title

    A novel FinFET with dynamic threshold voltage

  • Author

    Pushpadhas, Selwin Kumar ; Nair, Deleep R. ; Gupta, Amitava Das

  • Author_Institution
    Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
  • fYear
    2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Higher on-current (Idsat) and lower off-current (Ioff) can be achieved through dynamic threshold voltage (Vth) in MOSFETs. The change in Vth with gate bias is usually achieved through the body effect by connecting the gate terminal to the substrate in MOSFETs with heavily doped substrates. In this paper, we report the presence of dynamic Vth even in FinFETs with undoped channels. In this case, the change in Vth is due to modulation of the cross-sectional area of current flow. For the same Ioff, more than 10% increase in Idsat can be achieved in the proposed structure.
  • Keywords
    MOSFET; modulation; semiconductor doping; FinFET; MOSFET; body effect; cross-sectional area modulation; dynamic threshold voltage; gate bias; gate terminal; heavily doped substrate; higher on-current; lower off-current; metal oxide semiconductor field effect transistor; undoped channel; Doping; FinFETs; Logic gates; Mathematical model; Metals; Semiconductor process modeling; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Emerging Electronics (ICEE), 2014 IEEE 2nd International Conference on
  • Print_ISBN
    978-1-4673-6527-7
  • Type

    conf

  • DOI
    10.1109/ICEmElec.2014.7151218
  • Filename
    7151218
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3596641