DocumentCode :
3596759
Title :
Magnetically-coupled current probing structure consisting of TSVs and RDLs in 2.5D and 3D ICs
Author :
Kim, Jonghoon J. ; Bumhee Bae ; Sukjin Kim ; Sunkyu Kong ; Heegon Kim ; Jung, Daniel H. ; Joungho Kim
Author_Institution :
Terahertz Interconnection & Package Lab., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fYear :
2014
Firstpage :
1
Lastpage :
6
Abstract :
Simultaneous switching current (SSC) drawn by integrated circuits (ICs) creates simultaneous switching noise (SSN) on power nets, which causes a number of SI/PI problems, such as reduced noise margin and eye opening with increased SSN. Analyzing the effects of SSC and SSN is especially important for ICs targeted for mobile applications whose operating frequency keeps on increasing with decreasing operating voltage. Therefore, it is of utmost importance to measure SSCs for a thorough analysis of high-speed systems. In this paper, a magnetically-coupled current probing structure consisting of TSVs and RDLs, namely TSV-based Current Probe (TCP), is proposed for measuring the SSC resulting from the logical activity of the I/O buffers in 2.5D and 3D-ICs. SSCs are found by capturing the magnetic flux induced by the SSC of interest with the proposed current probing structure, and then reconstructing the original current waveform using the transfer impedance profile. Through a series of simulation in frequency and time domains, we verified the performance of the proposed probing structure consisting of TSVs and RDLs and proved it can effectively measure the SSC. Lastly, a test vehicle is fabricated on package level for experimental verification of the proposed probing structure.
Keywords :
buffer circuits; coupled circuits; integrated circuit noise; magnetic flux; three-dimensional integrated circuits; time-domain analysis; waveform analysis; 2.5D IC; 3D IC; I/O buffer; RDL; SI/PI problem; SSC; SSN; TCP; TSV-based current probe; current waveform reconstruction; high-speed system analysis; magnetic flux; magnetically-coupled current probing structure; mobile application; noise margin reduction; package level; power net; redistribution layer; simultaneous switching current; simultaneous switching noise; three dimensional integrated circuit; through silicon via; time domain; transfer impedance profile; Couplings; Current measurement; Impedance; Magnetic flux; Probes; Through-silicon vias; Voltage measurement; current probing structure; current waveform reconstruction; magnetic coupling; simultaneous switching current; through silicon via (TSV);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2014 International
Type :
conf
DOI :
10.1109/3DIC.2014.7152151
Filename :
7152151
Link To Document :
بازگشت