Title :
Analysis of 3D interconnect performance: Effect of the Si substrate resistivity
Author :
Sun, X. ; Van der Plas, G. ; Detalle, M. ; Beyne, E.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
3D technologies provide promising solutions to meet the needs of today´s high performance and high speed ICs. Therefore, a methodology is required to model, predict, and optimize the 3D interconnect performance. This paper focuses on modeling of the performance of 3D interconnect test structures, realized on Si substrates, both in the time frequency domains. In particular, the impact of the Si substrate resistivity is analyzed based on a calibrated model.
Keywords :
elemental semiconductors; integrated circuit interconnections; silicon; three-dimensional integrated circuits; 3D interconnect; Si; Si substrate resistivity; high speed IC; Conductivity; Integrated circuit interconnections; Radio frequency; Silicon; Solid modeling; Substrates; Three-dimensional displays; 3D interconnet; CPW (coplanar wave guide); RDL (redistribution layers); RF; Si interposer resistivity; TSV;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2014 International
DOI :
10.1109/3DIC.2014.7152156
