DocumentCode :
3596969
Title :
Growth of high electron emission CNTs for high resolution X-ray source
Author :
Ha, An Na ; Lee, Su Woong ; Lee, Eun Hye ; Bae, Woo Mi ; Woo, Hee Chul ; Eom, Young Ju ; Jang, Jin ; Park, K.C.
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
fYear :
2011
Firstpage :
155
Lastpage :
156
Abstract :
The high electron emission property of carbon nanotube (CNT) emitter grown is studied. CNT emitters were grown on silicon wafer by the resist-assisted patterning (RAP) process. The electron emission current of grown CNT emitter shows high current more than 30mA and repeatable properties in 100 times measurement. Through structural and electrical analysis, we discuss about the property of grown emitters.
Keywords :
carbon nanotubes; electron emission; CNT emitters; carbon nanotube emitter; electrical analysis; electron emission current; high electron emission CNT; high electron emission property; high resolution X-ray source; resist-assisted patterning; silicon wafer; Arrays; Carbon nanotubes; Current measurement; Electron emission; Scanning electron microscopy; Silicon; Time measurement; CNT; X-ray source; high electron emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Nanoelectronics Conference (IVNC), 2011 24th International
ISSN :
pending
Print_ISBN :
978-1-4577-1243-2
Electronic_ISBN :
pending
Type :
conf
Filename :
6004609
Link To Document :
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