Title :
Silicon films on ceramic substrates (SOCS): growth and solar cells
Author :
Slaoui, A. ; Focsa, A. ; Bau, S. ; Reber, S. ; Kieliba, T. ; Gutjahr, A. ; Bilyalov, R. ; Poortmans, J.
Author_Institution :
CNRS, Strasbourg, France
Abstract :
In this work, we review the different steps of formation of silicon thin film solar cells on different ceramics, namely mullite, SiSiC and SiN. The p+ silicon seeding layer is obtained by high-temperature CVD followed by zone-melting recrystallization (ZMR) in order to enlarge the grains. The active p doped silicon layer is formed by epitaxy on the recrystallized Si film. The structural and electrical properties of the different layers are presented and the diffusion of contaminants from the ceramic substrates into the silicon film was investigated. Solar cells were prepared on such SOCS structures and their photovoltaic properties were evaluated.
Keywords :
carrier density; chemical vapour deposition; diffusion barriers; elemental semiconductors; grain size; impurities; minority carriers; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; thermal diffusion; zone melting recrystallisation; Al/sub 2/O/sub 3/-SiO/sub 2/; Si; SiN; SiN ceramic substrates; SiSiC; SiSiC ceramic substrates; ZMR; ceramic substrates; diffusion; electrical properties; grain size; high-temperature CVD; mullite substrates; p doped silicon layer; photovoltaic properties; silicon seeding layer; silicon thin film solar cells; zone melting recrystallization;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Print_ISBN :
4-9901816-0-3
