DocumentCode :
3597116
Title :
High-voltage bias testing of thin-film PV modules
Author :
Dhere, Neelkanth G. ; Bet, Sachin M. ; Patil, Harshad P.
Author_Institution :
Florida Solar Energy Center, Cocoa, FL, USA
Volume :
2
fYear :
2003
Firstpage :
1923
Abstract :
Grid-connected PV systems must withstand high voltage bias in addition to harsh environmental conditions. High leakage currents can lead to electromigration and degradation, and thus become important issues for reliability and safety. This paper describes high voltage bias testing of thin-film PV modules in hot and humid conditions in Florida. Sudden rise in RH caused by sudden drop in temperature during the day resulted in sharp peaks in leakage current. Leakage currents for a typical clear sunny day in summer were approximately double compared to corresponding values in winter. Low-resistance paths created with the passage of time increased the leakage current continuously indicating probable exponential growth in leakage currents. Leakage currents increased proportionately to applied voltage bias, at least up to 600 V, showing potential of the technique as an excellent acceleration test.
Keywords :
amorphous semiconductors; electromigration; elemental semiconductors; leakage currents; photovoltaic power systems; semiconductor device reliability; semiconductor device testing; semiconductor thin films; silicon; solar cells; Florida; Si; acceleration test; electromigration; grid connected PV systems; high leakage currents; high voltage bias testing; reliability; safety; thin film PV modules;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306316
Link To Document :
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