DocumentCode :
3597135
Title :
A study on efficiency improvement of Doherty amplifier using LDMOS FET for WiMax networks
Author :
Kwon, Hyukyong ; Yoo, Chae up ; Kim, Min-su ; Yang, Younggoo
Author_Institution :
Dept. of Mobile Commun. Eng., Sungkyunkwan Univ., Suwon
Volume :
2
fYear :
2009
Firstpage :
1406
Lastpage :
1409
Abstract :
This paper describes Doherty technology, which has been used in design of WiMax power amplifier to improve its high efficiency and linearity. Doherty amplifier´s efficiency compare to AB Class power amplifier, 2-way LDMOS FET (2 pcs) has been applied. The results have showed that Doherty amplifier has 10% higher efficiency compare to usual AB Class power amplifier.
Keywords :
UHF power amplifiers; WiMax; field effect transistor circuits; 2-way LDMOS FET; Doherty amplifier design; WiMax power amplifier design; amplifier efficiency improvement; Circuit faults; Cities and towns; FETs; Frequency division multiplexing; High power amplifiers; Impedance; Linearity; Operational amplifiers; Power amplifiers; WiMAX; ACLR (Adjacent Channel Leakage Ratio); DPA (Doherty Power Amplifier); EVM (Error Vector Magnitude); OFDM (Orthogonal Frequency-division Multiplexed); Power-Add Efficiency (PAE);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Communication Technology, 2009. ICACT 2009. 11th International Conference on
ISSN :
1738-9445
Print_ISBN :
978-89-5519-138-7
Electronic_ISBN :
1738-9445
Type :
conf
Filename :
4809678
Link To Document :
بازگشت