Title :
Atomic layer deposition of RuO2 thin films on SiO2 using Ru(EtCp)2 and O2 plasma
Author :
Hao-Xiang Zhang ; Chun-Min Zhang ; Peng-Fei Wang
Author_Institution :
Hangzhou Silan Azure Co. Ltd., Hangzhou, China
Abstract :
Ruthenium dioxide (RuO2) thin films can be used as the electrode material for future technology nodes. In this work, atomic layer deposition (ALD) was used to deposit thin films of RuO2 on SiO2 using bis-(ethylcyclopentadienyl)-ruthenium [Ru(EtCp)2] as the precursor and oxygen (O2) plasma as the reducing agent. The thermal stability of the deposited films were investigated in the N2 ambient and in the forming-gas environments using rapid thermal processing (RTP). High-resolution transmission electron microscope (HR-TEM) and atomic force microscopy (AFM) were also employed to explore the growth mechanism of the RuO2 thin films on SiO2.
Keywords :
atomic force microscopy; atomic layer deposition; electrodes; oxygen; plasma; ruthenium compounds; semiconductor thin films; silicon compounds; thermal stability; transmission electron microscopes; AFM; ALD; HR-TEM; O2; RTP; Ru(EtCp)2; RuO2; SiO2; atomic force microscopy; atomic layer deposition; bis-(ethylcyclopentadienyl)-ruthenium; electrode material; forming-gas environment; high-resolution transmission electron microscope; oxygen plasma; rapid thermal processing; reducing agent; ruthenium dioxide thin film; thermal stability; Atomic layer deposition; Electrodes; Films; Plasmas; Rapid thermal processing; Stability analysis; Thermal stability;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
DOI :
10.1109/CSTIC.2015.7153392
