Title :
Investigation of a-SiOx:H films as passivation layer in heterojunction interface
Author :
Che-Hung Yeh ; Yen-Ho Chu ; Chien-Chieh Lee ; Yu-Lin Hsieh ; Shian-Ming Liu ; Jenq-Yang Chang ; I-Chen Chen ; Li, Tomi T.
Author_Institution :
Dept. of Mech. Eng., Nat. Central Univ., Chungli, Taiwan
Abstract :
In this study, the intrinsic hydrogenated amorphous silicon oxide (a-SiOx:H) thin films were prepared by Electron Cyclotron Resonance Chemical Vapor Deposition (ECR-CVD). High density plasma of ECR-CVD has many advantages: (1) faster deposition rate, (2) no electrode contamination, (3) low ion bombardment. The process parameters effect on a-SiOx:H thin films such as dilution ratio was investigated. In addition, this material will be applied to amorphous silicon / crystalline silicon heterojunction solar cells and improved the open-circuit voltage of solar cells.
Keywords :
chemical vapour deposition; cyclotron resonance; passivation; semiconductor thin films; silicon compounds; solar cells; SiO; amorphous silicon heterojunction solar cells; crystalline silicon heterojunction solar cells; dilution ratio; electron cyclotron resonance chemical vapor deposition; heterojunction interface; high density plasma; intrinsic hydrogenated amorphous silicon oxide thin films; open-circuit voltage; passivation layer; process parameters; Annealing; Etching; Hydrogen; ISO standards; Optics; Silicon; Substrates;
Conference_Titel :
Semiconductor Technology International Conference (CSTIC), 2015 China
DOI :
10.1109/CSTIC.2015.7153397
