Mechanism of I–V asymmetry of MIM capacitors based on high-k dielectric

Author

Lau, W.S. ; Yu, D.Q. ; Wang, X. ; Wong, H. ; Xu, Y.

Author_Institution

Dept. of Inf. Sci. & Electron. Eng., Zhejiang Univ., Hangzhou, China

fYear

2015

Firstpage

1

Lastpage

3

Abstract

MIM capacitors based on high-k dielectric are used in analog CMOS. They tend to show up an asymmetric I-V characteristics even though they may have an apparently symmetric structure; the same situation occurs for high-k dielectric deposited by CVD or ALD. In this paper, we will propose a physical mechanism for the asymmetric I-V characteristics observed and we will also provide experimental data to support our claim.

Keywords

CMOS analogue integrated circuits; MIM devices; atomic layer deposition; capacitors; chemical vapour deposition; high-k dielectric thin films; ALD; CVD; MIM capacitor; analog CMOS; asymmetric I-V characteristic; atomic layer deposition; chemical vapor deposition; complementary metal oxide semiconuctor; high-k dielectric; metal-insulator-metal capacitor; Capacitors; II-VI semiconductor materials; Integrated circuits; Microscopy; Zinc oxide; MIM capacitor; asymmetry; atomic force microscopy; atomic layer deposition; chemical vapor deposition; high-k dielectric; leakage current; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Technology International Conference (CSTIC), 2015 China

ISSN

2158-2297

Type

conf

DOI

10.1109/CSTIC.2015.7153403

Filename

7153403