Novel three dimensional (3D) CD-SEM profile measurements

A new SEM technology, Advantest´s Wafer MVM-SEM E3310, is becoming available that allows quantitative, image-based 3D profile metrology of nanoscale features. CD-AFM is generally employed for 3D profile information, but this technique has its own limitations for 1Xnm node production due to tip size constraints in the tightest spaces, and due to finite tip lifetime which can influence measurement stability. Using the patented multi-channel detector technology, this system can acquire information of surface concave and convex features and relative side wall angle (SWA) and height, quickly and non-destructively for nanoscale structures [1] [2]. Here we evaluate this new technology and demonstrate its applicability to contemporary advanced structures.