Resistant Gates for Polymorphic Electronics

The field of electronics is exposed to emergence of advanced materials with semi conducting properties as a perspective replacement for conventional silicon technology. These materials may comprise, for example, organic semiconductors. Number of interesting properties, such as am bipolarity, are usually observed. It´s possible to imagine a transistor which can work under certain conditions in a P-channel mode whereas it achieves N-channel mode of conductivity in a different situation. This particular type of transistor with am bipolar behavior turns out to be useful for development of polymorphic electronics. Its notion tends to simplify design procedure of complex digital circuits and it may also bring an additional features for a given application scenario. In fact, this is helpful especially in those situations when it´s necessary to change the target environment where the device with polymorphic circuit blocks is required to be operating. For example, a solar power plant control circuit will have a different functions during the daylight period and at night. The important characteristics is that its physical structure still remains to be the same. Above all, the impact of am bipolar property coupled with adoption of the emerging materials opens up a new direction for physical realization of the polymorphic building blocks.