Thermal stability of nickel silicide films in submicron p-type polysilicon lines

Author

Poon, M.C. ; Deng, F. ; Wong, H. ; Chan, M. ; Sin, J.K.O. ; Lau, S.S. ; Ho, C.H. ; Han, P.G.

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong

fYear

1997

fDate

8/30/1997 12:00:00 AM

Firstpage

54

Lastpage

58

Abstract

In this work, we found that very low resistivity NiSi can be thermally stable and is independent of linewidth for deep submicron p-type poly-Si lines up to 700-750°C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 μm. It widens the thermal budget windows and process tolerance for NiSi and further suggests that NiSi is a very promising contact material candidate for future ULSI devices

Keywords

ULSI; annealing; contact resistance; integrated circuit metallisation; nickel compounds; thermal stability; 0.1 to 0.2 micron; 0.5 hr; 1 hr; 700 to 750 degC; NiSi-Si; ULSI devices; annealing; contact material; contact resistance; linewidths; process tolerance; resistivity; submicron p-type polysilicon lines; thermal budget windows; thermal stability; Annealing; Conductivity; Etching; Nickel; Scanning electron microscopy; Semiconductor films; Silicides; Silicon compounds; Substrates; Thermal resistance; Thermal stability; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1997. Proceedings., 1997 IEEE Hong Kong

Print_ISBN

0-7803-3802-2

Type

conf

DOI

10.1109/HKEDM.1997.642330

Filename

642330