DocumentCode :
3598208
Title :
Automatic bipolar transistor characterisation
Author :
Brown, D.J. ; Moffat, N.M.J.
Author_Institution :
Plessey Research Caswell Ltd., Towcester, UK
fYear :
1988
fDate :
4/19/1988 12:00:00 AM
Firstpage :
42522
Lastpage :
42530
Abstract :
Discusses the optimisation of SPICE parameters from the BJT model to measured data in order to improve the characterisation of Bipolar Junction Transistors. Initial work was restricted to DC analysis but now includes AC analysis as well. After measuring the data, it is input to a program called ANALYSE which extracts an initial set of parameters to describe the device in question. These parameters are then optimised by a program called BTEX, leaving a set of parameters which characterises the device
Keywords :
bipolar transistors; circuit CAD; semiconductor device models; AC analysis; ANALYSE; BJT model; BTEX; Bipolar Junction Transistors; DC analysis; SPICE parameters; optimisation;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Type :
conf
Filename :
209090
Link To Document :
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