DocumentCode
3598208
Title
Automatic bipolar transistor characterisation
Author
Brown, D.J. ; Moffat, N.M.J.
Author_Institution
Plessey Research Caswell Ltd., Towcester, UK
fYear
1988
fDate
4/19/1988 12:00:00 AM
Firstpage
42522
Lastpage
42530
Abstract
Discusses the optimisation of SPICE parameters from the BJT model to measured data in order to improve the characterisation of Bipolar Junction Transistors. Initial work was restricted to DC analysis but now includes AC analysis as well. After measuring the data, it is input to a program called ANALYSE which extracts an initial set of parameters to describe the device in question. These parameters are then optimised by a program called BTEX, leaving a set of parameters which characterises the device
Keywords
bipolar transistors; circuit CAD; semiconductor device models; AC analysis; ANALYSE; BJT model; BTEX; Bipolar Junction Transistors; DC analysis; SPICE parameters; optimisation;
fLanguage
English
Publisher
iet
Conference_Titel
Large Signal Device Models and Parameter Extractions for Circuit Simulation, IEE Colloquium on
Type
conf
Filename
209090
Link To Document