Title :
Robust, model-independent generation of intrinsic characteristics and multi-bias parameter extraction for MESFETs/HEMTs
Author :
Ghazinour, A. ; Jansen, R.H.
Author_Institution :
Dept. of Electr. Eng., Tech. Hochschule Aachen, Germany
Abstract :
This paper presents an improved, model-independent and particularly robust RF characterization and parameter extraction approach based on multi-bias S-parameters. With a new hybrid evolutionary/conjugate gradient strategy, consistent and largely start value-independent results are obtained. Devices from various MMIC foundries are used to demonstrate the quality of this approach.
Keywords :
S-parameters; Schottky gate field effect transistors; conjugate gradient methods; equivalent circuits; high electron mobility transistors; microwave field effect transistors; optimisation; semiconductor device models; HEMT; MESFET; hybrid evolutionary/conjugate gradient strategy; intrinsic characteristics; model-independent generation; multi-bias S-parameters; multi-bias parameter extraction; robust RF characterization; Character generation; Data mining; Equivalent circuits; Fitting; HEMTs; MESFETs; MMICs; MODFETs; Radio frequency; Robustness;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.689344
