DocumentCode :
3598450
Title :
High power injectorless quantum cascade laser structure in the 6.0 µm wavelength range
Author :
Katz, S. ; Boehm, G. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
fYear :
2009
Firstpage :
1
Lastpage :
2
Abstract :
An injectorless quantum cascade laser design, using two 0.6 nm InAs spikes within the active zone, yielding shorter wavelength and improved performance is presented. The average pulsed output power was measured to 880 mW at 297 K.
Keywords :
indium compounds; laser beams; quantum cascade lasers; InAs; active zone; high-power injectorless quantum cascade laser; power 880 mW; pulsed output power; temperature 297 K; wavelength 6.0 mum; Optical design; Optical scattering; Plasma temperature; Plugs; Power generation; Power lasers; Pulse measurements; Quantum cascade lasers; Semiconductor lasers; Wavelength measurement; (140.3070) Infrared and far-infrared lasers; (140.5965) Semiconductor lasers, quantum cascade;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Print_ISBN :
978-1-55752-869-8
Electronic_ISBN :
978-1-55752-869-8
Type :
conf
Filename :
5225481
Link To Document :
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