DocumentCode
3598486
Title
Direct phonon excitation in semiconductors by ultrashort intense THz radiation
Author
Manceau, J.-M. ; Loukakos, P.A. ; Tzortzakis, S.
Author_Institution
Inst. of Electron. Struct. & Laser, Found. for Res. & Technol.-Hellas, Heraklion, Greece
fYear
2009
Firstpage
1
Lastpage
2
Abstract
Ultrashort intense THz radiation generated through laser filamentation in air is employed to directly excite the lattice of AlGaAs semi-insulating crystals. Incoherent as well as coherent phonons are shown to be excited in this way.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; optical pulse generation; phonons; terahertz waves; AlGaAs; coherent phonons; direct phonon excitation; laser filamentation generation; semiinsulating crystals; ultrashort intense THz radiation; Laser excitation; Lattices; Nonlinear optics; Optical pulse generation; Phonons; Photonic band gap; Probes; Pulse amplifiers; Semiconductor lasers; Spectroscopy; (300.6495) Spectroscopy, Terahertz; (300.6500) Spectroscopy, time-resolved; (320.7130) Ultrafast processes in condensed matter, including semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on
Print_ISBN
978-1-55752-869-8
Electronic_ISBN
978-1-55752-869-8
Type
conf
Filename
5225658
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