Title :
Silicon-germanium BiCMOS technology and a CAD environment for 2-40 GHz VLSI mixed-signal ICs
Author :
Subbanna, S. ; Larson, L. ; Freeman, G. ; Ahlgren, D. ; Stein, K. ; Dickey, C. ; Mecke, J. ; Rincon, A. ; Bacon, P. ; Groves, R. ; Soyuer, M. ; Harame, D. ; Dunn, J. ; Rowe, D. ; Chon, W. ; Herman, D. ; Meyerson, B.
Author_Institution :
Commun. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
fDate :
6/23/1905 12:00:00 AM
Abstract :
SiGe BiCMOS technology provides a stable, ultra-high performance, semiconductor technology capable of supporting large mixed-signal VLSI circuit designs for a variety of emerging communications applications. This technology has been wedded to a CAD system that supports a variety of high-performance circuit designs, mixed-signal circuit block re-use, and the ability to accurately predict circuit performance at the highest frequencies. This paper will summarize the progress this technology has made in recent years in moving from the research laboratory into a production environment
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MMIC; UHF integrated circuits; VLSI; circuit CAD; integrated circuit design; mixed analogue-digital integrated circuits; semiconductor materials; 2 to 40 GHz; BiCMOS technology; CAD environment; SiGe; VLSI; block re-use; circuit performance; mixed-signal ICs; production environment; BiCMOS integrated circuits; CMOS technology; Circuit optimization; Circuit synthesis; Germanium silicon alloys; Microelectronics; Production; Silicon germanium; Space technology; Very large scale integration;
Conference_Titel :
Custom Integrated Circuits, 2001, IEEE Conference on.
Print_ISBN :
0-7803-6591-7
DOI :
10.1109/CICC.2001.929842
