DocumentCode
3598580
Title
A New Anisotropic Etching of N+ Poly-Si Using XeCl Excimer Laser Beam
Author
Okano, H. ; Sekine, M. ; Horiike, Y.
Author_Institution
Toshiba VLSI Research Center, Toshiba Corp. 1, Toshiba-cho, Saiwaiku, Kawasaki, Japan 210
fYear
1984
Firstpage
74
Lastpage
75
Keywords
Anisotropic magnetoresistance; Etching; Gas lasers; Laser beams; Lithography; Mercury (metals); Protection; Surface emitting lasers; Surface waves; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1984. Digest of Technical Papers. Symposium on
Print_ISBN
4-930813-08-5
Type
conf
Filename
4480706
Link To Document