Title :
A physical alpha-power law MOSFET model
Author :
Bowman, Keith A. ; Austin, Blanca L. ; Eble, John C. ; Tang, Xinghai ; Meindl, James D.
Author_Institution :
Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A new compact physics-based alpha-power law MOSFET model is introduced to enable projections of low power circuit performance for future generations of technology by linking the simple mathematical expressions of the original Alpha-Power Law Model with their physical origins. The new model, verified by HSPICE simulations and measured data, includes: (1) a subthreshold region of operation for evaluating the on/off current trade-off that becomes a dominant low power design issue as technology scales, (2) the effects of vertical and lateral high field mobility degradation and velocity saturation, and (3) threshold voltage roll-off. Model projections for MOSFET CV/I indicate a 2X-performance opportunity compared to NTRS extrapolations for the 250, 180, and 150 nm generations subject to maximum leakage current estimates of the roadmap. NTRS and model calculations converge at the 70 nm technology generation, which exhibits pronounced on/off current interdependence for low power gigascale integration (GSI).
Keywords :
MOSFET; ULSI; carrier mobility; integrated circuit design; low-power electronics; semiconductor device models; GSI; HSPICE simulations; alpha-power law MOSFET model; gigascale integration; high field mobility degradation; high field velocity saturation; leakage current estimates; low power circuit performance; low power design; on/off current tradeoff; physical MOSFET model; subthreshold operation region; technology scaling; threshold voltage rolloff; Circuit optimization; Circuit simulation; Current measurement; Joining processes; MOSFET circuits; Mathematical model; Power MOSFET; Power generation; Power measurement; Velocity measurement;
Conference_Titel :
Low Power Electronics and Design, 1999. Proceedings. 1999 International Symposium on
Print_ISBN :
1-58113-133-X
