DocumentCode
3598814
Title
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
Author
Shang, Huiling ; Gousev, E. ; Gribelyuk, M. ; Chu, J.O. ; Mooney, P.M. ; Wang, X. ; Guarini, K.W. ; Ieong, M.
Author_Institution
IBM Semicond. R&D Center Res. Div., T. J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
1
fYear
2004
Firstpage
306
Abstract
This paper reviews the current critical issues on the fabrication of Ge surface channel MOSFET devices. Compared with surface channel Ge MOSFETs, strained Ge buried channel structures can be integrated with fewer processing challenges to achieve significantly enhanced hole mobility and an improved electron mobility. The device design and scalability of the strained Ge buried channel MOSFETs are presented based on our recent results.
Keywords
MOSFET; electron mobility; germanium; hole mobility; semiconductor device manufacture; semiconductor devices; MOSFET devices; buried channel structures; device design; electron mobility; germanium surface channel; hole mobility; mobility enhancement; Fabrication; Frequency; Germanium; High-K gate dielectrics; MOS capacitors; MOSFETs; Nitrogen; Passivation; Surface cleaning; Surface treatment;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435013
Filename
1435013
Link To Document