Title :
CMOS shallow trench isolation x-stress effect on channel width for 0.18μm technology
Author :
Tan, Philip Beow Yew ; Kordesch, A.V. ; Sidek, Othman
Author_Institution :
Silterra Malaysia Sdn., Kedah, Malaysia
Abstract :
We have investigated the effect of shallow trench isolation (STI) induced mechanical x-stress (in the direction of channel length) effect on transistor channel width. STI x-stress has less effect on narrow width NMOS transistor for both threshold voltage (Vt) and drain current (Id). For narrow width PMOS transistor, STI x-stress has higher effect on Id. PMOS Vt is not affected by STI x-stress.
Keywords :
CMOS integrated circuits; MOSFET; isolation technology; stress effects; 0.18 micron; CMOS; NMOS transistor; PMOS transistor; drain current; mechanical x-stress; shallow trench isolation; threshold voltage; transistor channel width; CMOS technology; Degradation; Electric variables; Fingers; Isolation technology; MOS devices; MOSFETs; Testing; Threshold voltage; Transistors;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435016
