Analysis on the surface electrical field of high voltage bulk-silicon LEDMOS with multiple field plates

Author

Sun, Weifeng ; Yi, Yangbo ; Lu, Shengli ; Shi, Longxing

Author_Institution

National ASIC Syst. Eng. Res. Center, Southeast Univ., Nanjing, China

Volume

1

fYear

2004

Firstpage

353

Abstract

In this paper, the surface electrical field distributions along the drift regions of the conventional LEDMOS, TPFP LEDMOS and M-TPFP LEDMOS were presented by MEDICI respectively. In terms of the analysis and discussion results on the changes of the electrical field peaks of the three high voltage LEDMOS, a method to improve the breakdown capability of the high voltage BS LEDMOS was given. The analysis results also proved that the metal wires crossed the LEDMOS wouldn´t degrade the breakdown capability of the high voltage LEDMOS for the thick oxide layer.

Keywords

electric breakdown; electric fields; power MOSFET; BS LEDMOS; M-TPFP LEDMOS; MEDICI; TPFP LEDMOS; breakdown capability; bulk-silicon LEDMOS; conventional LEDMOS; drift regions; metal wires; multiple field plates; oxide layer; surface electrical field; Application specific integrated circuits; Breakdown voltage; Degradation; Doping profiles; Fabrication; MOS devices; Metallization; Power integrated circuits; Systems engineering and theory; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on

Print_ISBN

0-7803-8511-X

Type

conf

DOI

10.1109/ICSICT.2004.1435025

Filename

1435025