Title :
Key attributes and solutions of CMP process for advanced Cu damascene interconnects
Author_Institution :
Cabot Microelectron. Corp., Aurora, IL, USA
Abstract :
This paper provides a brief introduction of CMP evolution for Cu damascene interconnects including its technology, performance drivers, and unique set of challenges. A manufacturing worthy Cu CMP solution calls attention to all key attributes involved. Discussions and examples are centered around corrosion control, role of abrasive in maintaining chemical and mechanical balance, scratch reduction and overall Cu/barrier process integration.
Keywords :
chemical mechanical polishing; copper; integrated circuit interconnections; CMP process; Cu; Cu damascene interconnects; Cu-barrier process integration; chemical balance; corrosion control; mechanical balance; scratch reduction; Capacitance; Chemical technology; Copper; Corrosion; Delamination; Dielectric constant; Dielectric films; Dielectric materials; Surfaces; Wiring;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435057
