Title :
Worst-case parameters derived from device physics
Author :
Prigge, O. ; Miura-Mattausch, M. ; Savignac, D. ; Feldmann, U.
Author_Institution :
Semicond. Div., Siemens AG, Munich, Germany
Abstract :
We have developed a new concept for deriving worst-case parameters based on device physics. With the concept it will be shown that we can predict worst-case performances at device and circuit levels accurately from in-line measurements of technological parameter variations without statistical study
Keywords :
semiconductor device models; tolerance analysis; circuit level; device physics; in-line measurements; technological parameters; worst-case parameters; Circuit simulation; Coupling circuits; Doping profiles; Equations; Gaussian distribution; Histograms; MOSFETs; Performance evaluation; Physics; Research and development;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.539818
