DocumentCode :
35990
Title :
Variation-Tolerant, Ultra-Low-Voltage Microprocessor With a Low-Overhead, Within-a-Cycle In-Situ Timing-Error Detection and Correction Technique
Author :
Seongjong Kim ; Mingoo Seok
Author_Institution :
Columbia Univ., New York, NY, USA
Volume :
50
Issue :
6
fYear :
2015
fDate :
Jun-15
Firstpage :
1478
Lastpage :
1490
Abstract :
This paper presents a design approach for upgrading the resiliency of ultra-low-voltage (ULV) microprocessors through a voltage-scalable and low-overhead in-situ error detection and correction (EDAC) technique. Particular efforts are made to overcome the poor voltage scalability and area/energy/throughput overhead of the existing EDAC techniques when applied to ULV designs. The 16 bit microprocessor employing the proposed EDAC and dynamic voltage scaling schemes is demonstrated in a 65 nm. The microprocessor can automatically modulate VDD based on timing error flags across static/slow variations and in-situ detect and correct the timing errors from fast dynamic variations, virtually eliminating timing and voltage margins. At a typical process/voltage/temperature corner, the proposed design improves the minimum energy consumption by 42% with 140 mV additional voltage scaling, as compared to the baseline design. At the same throughput (80 MHz), the proposed design consumes 38% less energy than the baseline operating at its minimum energy point. At the same energy consumption, the proposed design achieves 2.3 × higher throughput than the baseline design. The area overhead of the proposed design is 8.3%.
Keywords :
energy consumption; error correction; error detection; microprocessor chips; EDAC technique; ULV microprocessor; area overhead; baseline design; energy consumption; in-situ timing error detection and correction; size 65 nm; timing error flag; ultralow-voltage microprocessor; variation-tolerance; voltage margin; voltage scalability; word length 16 bit; Clocks; Delays; Latches; Pipelines; Registers; Throughput; In-situ error detection and correction; microprocessor; near-threshold; sub-threshold; variation tolerance; voltage scaling;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2418713
Filename :
7091041
Link To Document :
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