Title :
CMOS integration of a thermal pressure sensor system
Author :
Haberli, A. ; Paul, O. ; Malcovati, P. ; Faccio, M. ; Maloberti, E. ; Baltes, H.
Author_Institution :
Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland
Abstract :
We report the integration of a CMOS thermal pressure sensor system for the range of 102 to 106 Pa. The operating principle of the sensor is based on the pressure-dependent heat transfer across the air gap separating a heat source from a heat sink. After completion of the double metal CMOS process the sensor structure is obtained by a fully CMOS-compatible sacrificial metal etching. The microsystem includes both sensor and a readout circuit. The interface circuit compensates for temperature effects and provides a bitstream at the system output representing the ambient pressure
Keywords :
CMOS integrated circuits; microsensors; pressure sensors; 1E2 to 1E6 Pa; air gap; bitstream; double metal CMOS process; heat transfer; interface circuit; microsystem; readout circuit; sacrificial metal etching; temperature compensation; thermal pressure sensor; CMOS process; Circuits; Etching; Heat engines; Heat sinks; Heat transfer; Resistance heating; Sensor systems; Temperature sensors; Thermal sensors;
Conference_Titel :
Circuits and Systems, 1996. ISCAS '96., Connecting the World., 1996 IEEE International Symposium on
Print_ISBN :
0-7803-3073-0
DOI :
10.1109/ISCAS.1996.539908
