Title :
A comprehensive numerical simulation of heavily irradiated p-type and n-type silicon detectors
Author :
Petasecca, Marco ; Moscatelli, Francesco ; Passeri, Daniele ; Pignatel, Giorgio Umberto ; Scarpello, Carlo ; Caprai, Giovanni
Author_Institution :
Perugia Univ.
Abstract :
In the framework of the CERN-RD50 collaboration, the adoption of p-type substrates has been proposed as a suitable mean to improve the radiation hardness of silicon detectors up to fluences of 1016 n/cm2. In this work the simulated electrical characteristics of irradiated p-type and n-type detectors are reported, for comparison with experimental measurements collected from the literature. The behaviour of the silicon devices at a fluence of 1016 n/cm2 shows better results in terms of charge collection efficiency using a p-type silicon detector
Keywords :
numerical analysis; position sensitive particle detectors; radiation hardening; silicon radiation detectors; charge collection efficiency; electrical characteristics; heavily irradiated n-type silicon detector; heavily irradiated p-type silicon detector; numerical simulation; p-type substrates; radiation hardness; silicon devices; Doping; Large Hadron Collider; Lattices; Leakage current; Numerical simulation; Radiation detectors; Semiconductor process modeling; Silicon devices; Silicon radiation detectors; Voltage;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2005 IEEE
Print_ISBN :
0-7803-9221-3
DOI :
10.1109/NSSMIC.2005.1596601
