Monolayer transition metal dichalcogenide and black phosphorus transistors for low power robust SRAM design

Vertical monolayer heterojunction FETs based on transition metal dichalcogenides (TMDCFETs) and planar black phosphorus FETs (BPFETs) have demonstrated excellent sub-threshold swing, high I_ON/I_OFF, and high scalability, making them attractive candidates for post-CMOS memory design. This paper explores TMDCFET and BPFET SRAM design by combining atomistic self-consistent device modeling with SRAM circuit design and simulation. Our simulations show that at low operating voltages, TMDCFET and BPFET SRAMs exhibit significant advantages in static power, dynamic read/write noise margin, and read/write delay over both nominal and read/write-assisted 16nm CMOS SRAMs.