Title :
Monitoring of aging properties of AlGaAs high-power laser arrays
Author :
Tomm, J.W. ; B?¤rwolff, A. ; Menzel, U. ; Vpss, M. ; Puchert, R. ; Elsaesser, Th.
Author_Institution :
Max-Born Inst., Berlin, Germany
Abstract :
Reports on a study of the aging behavior of GaAs/AlGaAs high power laser arrays designed for the 808 nm emitting range and aims to provide more insight in aging processes and how to quantify them. Both the double quantum well (DQW) graded index separate confinement heterostructures (GRINSCH) as well as the step index (SIN) DQW devices were aged in accelerated aging regimes. It was found, that aging significantly influences photocurrent spectra obtained by using the laser diode like a detector. Two spectral regions effected by the aging have been found: in GRIN structures the 1.6-1.8 eV region is sensitive to the first aging step, whereas the impurity band indicates higher aging levels for both kinds of structures investigated. Thus the well-known method of photocurrent spectroscopy is found to be a useful tool for monitoring the aging properties of diode lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; life testing; photoconductivity; photodetectors; quantum well lasers; semiconductor laser arrays; 1.6 to 1.8 eV; 808 nm; 808 nm emitting range; AlGaAs high-power laser arrays; DQW graded index separate confinement heterostructures; GRINSCH; GaAs-AlGaAs; accelerated aging regimes; aging properties; detector; double quantum well; impurity band; laser diode; monitoring; photocurrent spectra; spectral regions; step index DQW devices; Aging; Diode lasers; Gallium arsenide; Monitoring; Optical arrays; Optical design; Photoconductivity; Power lasers; Quantum well lasers; Silicon compounds;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565277
