DocumentCode
3599580
Title
On the operational and manufacturing tolerances of GaAs/AlAs MQW modulators
Author
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y. ; Leibenguth, R.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
1
fYear
1997
Firstpage
196
Abstract
In conclusion, we have developed an empirical model for GaAs-AlAs MQW reflection modulators and find that for a 3 volt swing, with feedback circuitry to adjust the voltage offset, a wavelength range of 17 nm is possible while maintaining 2:1 contrast, corresponding to a temperature variation of 60 C
Keywords
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; optical feedback; reflectivity; semiconductor device models; semiconductor quantum wells; 3 V; 60 C; GaAs-AlAs; GaAs-AlAs MQW reflection modulators; GaAs/AlAs MQW modulators; empirical model; feedback circuitry; manufacturing tolerances; operational tolerances; temperature variation; volt swing; voltage offset; wavelength range; CMOS technology; Diodes; Excitons; Gallium arsenide; Manufacturing; Optical beams; Optical modulation; Optical surface waves; Quantum well devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630583
Filename
630583
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