Title :
On the operational and manufacturing tolerances of GaAs/AlAs MQW modulators
Author :
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y. ; Leibenguth, R.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
In conclusion, we have developed an empirical model for GaAs-AlAs MQW reflection modulators and find that for a 3 volt swing, with feedback circuitry to adjust the voltage offset, a wavelength range of 17 nm is possible while maintaining 2:1 contrast, corresponding to a temperature variation of 60 C
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; optical feedback; reflectivity; semiconductor device models; semiconductor quantum wells; 3 V; 60 C; GaAs-AlAs; GaAs-AlAs MQW reflection modulators; GaAs/AlAs MQW modulators; empirical model; feedback circuitry; manufacturing tolerances; operational tolerances; temperature variation; volt swing; voltage offset; wavelength range; CMOS technology; Diodes; Excitons; Gallium arsenide; Manufacturing; Optical beams; Optical modulation; Optical surface waves; Quantum well devices; Voltage;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630583
