DocumentCode :
3599592
Title :
The Design of Ultra Low Power CMOS CGLNA in Nanometer Technology
Author :
Kavyashree, P. ; Yellampalli, Siva S.
Author_Institution :
VTU Ext. Centre, UTL Tech. Ltd., Bangalore, India
fYear :
2014
Firstpage :
15
Lastpage :
19
Abstract :
In this paper, an ultra low power CMOS common gate LNA (CGLNA) with a capacitive cross-coupled (CCC) gm boosting scheme is designed and analysed. The technique described has been employed in literature to reduce the noise figure (NF). In this work we have extended the concept for low voltage operation along with improving NF and also for significant reduction in current consumption. A gm boosted CCCCGLNA is implemented in 90nm CMOS technology. It has a gain of 9.9dB and a noise figure of 0.87dB at 2.4GHz ISM band and consumes less power (0.5mw) from 0.6V supply voltage. The designed gm boosted CCC-CGLNA is suitable for low power application in CMOS technologies.
Keywords :
CMOS integrated circuits; low noise amplifiers; nanoelectronics; CCC boosting scheme; ISM band; NF; capacitive cross-coupled boosting scheme; common gate low noise amplifier; complementary metal oxide semiconductor; frequency 2.4 GHz; gain 9.9 dB; nanometer technology; noise figure; power 0.5 mW; size 90 nm; ultralow power CMOS CGLNA; voltage 0.6 V; CMOS integrated circuits; Capacitors; Impedance matching; Logic gates; Noise; Noise figure; CCC; CGLNA; Low-noise-amplifier (LNA);
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electronic System Design (ISED), 2014 Fifth International Symposium on
Print_ISBN :
978-1-4799-6964-7
Type :
conf
DOI :
10.1109/ISED.2014.11
Filename :
7172738
Link To Document :
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