1.27 μm resonant cavity PIN photodetector using an InAs/GaAs quantum dot active region grown on GaAs

Author

Huffaker, D.L. ; Deng, H. ; Campbell, J.C. ; Deppe, D.G.

Author_Institution

Microelectron. Res. Center, Texas Univ., Austin, TX, USA

Volume

1

fYear

1997

Firstpage

237

Abstract

In this talk we describe, to our knowledge, the first optoelectronic device based on InGaAs quantum dots (QDs) grown directly on GaAs that operate at 1.3 μm. The device is an InAs-GaAs QD resonant cavity PIN photodiode, which shows a surprisingly high 49% peak detection efficiency at the wavelength of 1267 nm

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical resonators; optical resonators5795175; optoelectronic devices; p-i-n photodiodes; photodetectors; semiconductor growth; semiconductor quantum dots; semiconductor quantum wells; 1.3 mum; 1267 nm; 49 percent; InAs-GaAs; InAs-GaAs QD resonant cavity PIN photodiode; InAs/GaAs quantum dot active region grown; mbe growth; optoelectronic device; peak detection efficiency; resonant cavity PIN photodetector; Absorption; Distributed Bragg reflectors; Gallium arsenide; Mirrors; Photodetectors; Photodiodes; Quantum dots; Resonance; US Department of Transportation; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630603

Filename

630603