Interface defect centers in oxides on Si1-xGex for ULSI applications

Author

Mallik, S. ; Mahata, C. ; Hota, M.K. ; Sarkar, C.K. ; Maiti, C.K.

Author_Institution

Electron. & ECE Dept., Indian Inst. of Technol. Kharagpur, Kharagpur, India

fYear

2009

Firstpage

1

Lastpage

3

Abstract

Rapid thermal oxidation (RTO) of heteroepitaxial thin Si_1-xGe_x layers (x=0.85) at 815Â°C in dry O₂ has been studied. We have investigated the origin of interface defects in Si_0.15Ge_0.85/SiGeO₂ RTO oxides by electron paramagnetic resonance (EPR) through internal photoemission (IPE) technique. Spin concentration of the paramagnetic defect centers have been determined from EPR results. After IPE capacitance-voltage (C-V) and current-voltage (I-V) characteristics were measured at different bias conditions to observe the charge build up due to trapping at pre-existing defects or defect precursors. Calculated flat band voltage from high frequency C-V characteristics has been modeled and number of traps per unit area (N_trap) and capture cross-section (Â¿) of the traps have also been determined.

Keywords

Ge-Si alloys; ULSI; interface phenomena; oxidation; paramagnetic resonance; rapid thermal processing; Si_1-xGe_x-SiGeO₂; ULSI applications; capacitance-voltage characteristics; current-voltage characteristics; electron paramagnetic resonance; heteroepitaxial thin layers; interface defect centers; internal photoemission technique; rapid thermal oxidation; spin concentration; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electron traps; Oxidation; Paramagnetic materials; Paramagnetic resonance; Photoelectricity; Voltage; Charge trapping; Internal photoemission; Magnetic resonance; SiGe;

fLanguage

English

Publisher

ieee

Conference_Titel

Computers and Devices for Communication, 2009. CODEC 2009. 4th International Conference on

Print_ISBN

978-1-4244-5073-2

Type

conf

Filename

5407237