• DocumentCode
    3600188
  • Title

    Analysis of Double Hump Substrate Current in NLDMOSFET

  • Author

    Tai, K.Y. ; Gong, J. ; Su, R.Y. ; Yang, F.C. ; Tsai, C.L.

  • Author_Institution
    Nat. Tsing Hua Univ., Hsinchu, Taiwan
  • fYear
    2010
  • Firstpage
    193
  • Lastpage
    196
  • Abstract
    In this paper the phenomenon of Double Hump Substrate Current (DHSC) in NLDMOSFET is studied. We used 2-D device simulator MEDICI to investigate the physical mechanism. It is shown that the double hump substrate current is strongly dependent on the lateral electric field at the source-side. The fall-off in the substrate current at high VGS is caused by hole velocity reduction due to the larger vertical electric field as VGS increase. Besides, simulation result verifies that both of lower P-base implant and heavier NLDD doping concentration can help to eliminate the double hump substrate current effect because of reducing electric field in the source-side.
  • Keywords
    MOSFET; electric fields; 2D device simulator MEDICI; NLDD doping concentration; NLDMOSFET; double hump substrate current; hole velocity reduction; lateral electric field; vertical electric field; Analytical models; Doping; Electric potential; Hot carrier injection; Impact ionization; Implants; Medical simulation; Power semiconductor devices; Substrates; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices & IC's (ISPSD), 2010 22nd International Symposium on
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-7718-0
  • Electronic_ISBN
    1943-653X
  • Type

    conf

  • Filename
    5544007
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3600188