A recent study of the formation of SIMOX/SOI materials and their device applications

Author

Zhang, J.P. ; Li, Y.X. ; Xi, X.M. ; Zhang, X. ; Wang, Y.Y.

Author_Institution

Dept. of Phys., Xinjiang Univ., Wulumuqi, China

fYear

1996

Firstpage

37

Lastpage

40

Abstract

The synthesis of silicon dioxide by O⁺ implantation into bulk silicon to form SOI substrates has been widely studied worldwide and mainly applied for the realization of improved CMOS circuits. In this paper we report the work recently completed in China involving: (i) SIMOX formed using double and triple O⁺ ion implantation, (ii) the effects of the annealing ambient on the SIMOX material and (iii) the fabrication and assessment of CMOS devices on SOI/SIMOX substrates

Keywords

Auger effect; CMOS integrated circuits; Rutherford backscattering; SIMOX; X-ray photoelectron spectra; annealing; integrated circuit measurement; ion implantation; silicon-on-insulator; transmission electron microscopy; AES; CMOS circuits; CMOS devices; CMOS/SIMOX ring oscillators; China; RBS; SIMOX/SOI materials; SOI substrates; Si-SiO₂; Si:O; SiO₂ synthesis; XPS; XTEM; annealing ambient; double O⁺ ion implantation; triple O⁺ ion implantation; Annealing; Circuits; Electrons; Ion implantation; Microelectronics; Ring oscillators; Semiconductor materials; Silicon on insulator technology; Spectroscopy; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology. Proceedings of the 11th International Conference on

Print_ISBN

0-7803-3289-X

Type

conf

DOI

10.1109/IIT.1996.586109

Filename

586109