• DocumentCode
    3600367
  • Title

    Ultrafast electronic processes in porous silicon

  • Author

    Fauchet, Philippe M.

  • Author_Institution
    Dept. of Electr. Eng., Rochester Univ., NY
  • Volume
    1
  • fYear
    1994
  • Firstpage
    305
  • Abstract
    Time-resolved photoluminescence and induced absorption measurements are used to investigate the ultrafast electronic processes in porous silicon. We observe transients ranging from less than 100 femtoseconds to well in excess of 10 microseconds. They are interpreted in terms of carrier thermalization, trapping and recombination
  • Keywords
    silicon; 100 fs to 10 ms; Si; carrier recombination; carrier thermalization; carrier trapping; induced absorption; porous silicon; time-resolved photoluminescence; transients; ultrafast electronic processes; Absorption; Electron traps; Light emitting diodes; Luminescence; Radiative recombination; Silicon; Spontaneous emission; Temperature; Ultrafast electronics; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1994. LEOS '94 Conference Proceedings. IEEE
  • Print_ISBN
    0-7803-1470-0
  • Type

    conf

  • DOI
    10.1109/LEOS.1994.587015
  • Filename
    587015
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3600367