Title :
Diamond wafer for SAW application
Author :
Fujii, S. ; Seki, Y. ; Yoshida, K. ; Nakahata, H. ; Higaki, K. ; Kitabayashi, H. ; Shikata, S.
Author_Institution :
Res. Lab. Sumitomo Electr. Ind., Hyogo, Japan
Abstract :
A three inch wafer of polycrystalline diamond on silicon has been successfully developed. High uniformity of quality of diamond and almost defect free diamond surface associated with high quality ZnO exhibit wonderful performance of diamond SAW devices. It was also observed that this material system has super high power handling capability, smaller temperature deviation compared with 36 Y cut and ST cut quartz, low phase slope characteristics in the passband, and extremely high breakdown voltage. A variety of applications are expected with the material system utilizing these features
Keywords :
band-pass filters; diamond; electric breakdown; elemental semiconductors; surface acoustic wave devices; surface acoustic wave filters; surface topography; C; SAW application; SAW devices; SAW filters; Si; Si surface; almost defect free diamond surface; applications; diamond wafer; extremely high breakdown voltage; high power handling capability; low phase slope characteristics; passband; performance; polycrystalline diamond; temperature deviation; three inch wafer; Acoustic materials; Radio frequency; SAW filters; Silicon; Sputtering; Substrates; Surface acoustic wave devices; Surface acoustic waves; Temperature; Zinc oxide;
Conference_Titel :
Ultrasonics Symposium, 1997. Proceedings., 1997 IEEE
Print_ISBN :
0-7803-4153-8
DOI :
10.1109/ULTSYM.1997.663006
