• DocumentCode
    36017
  • Title

    Coherent Plasmonic Interconnection in Silicon-Based Electrical Circuit

  • Author

    Aihara, T. ; Sakai, H. ; Takeda, A. ; Okahisa, S. ; Fukuhara, M. ; Ota, M. ; Ishii, Y. ; Fukuda, M.

  • Author_Institution
    Dept. of Electr. & Electr. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
  • Volume
    33
  • Issue
    10
  • fYear
    2015
  • fDate
    May15, 15 2015
  • Firstpage
    2139
  • Lastpage
    2145
  • Abstract
    This paper presents a feasibility study of optical interconnections using surface plasmon polaritons (SPPs) as coherent carrier waves in a silicon-based electrical circuit. A gold film plasmonic waveguide and a gold/silicon Schottky-type plasmonic detector were monolithically integrated with an electrical circuit based on metal-oxide-semiconductor field-effect transistors on a silicon substrate. A 1550-nm-band laser source was used for SPP excitation, and the photocurrent generated by the plasmonic detector was amplified 16 000 times by the monolithically integrated electrical circuit after SPPs carrying the optical intensity signal propagated over the gold film surface for a distance of 100 μm. The integrated circuit detected an optical beat signal by using a delayed self-homodyne technique, thus demonstrating that SPPs can be used as coherent carrier waves in the circuit. Additionally, optical amplitude- and frequency-modulated signal transmission in a gold film plasmonic waveguide and optical heterodyne detection by amplification of the signal intensity in a gold/silicon Schottky-type plasmonic detector were also demonstrated.
  • Keywords
    MOSFET; Schottky diodes; elemental semiconductors; gold; heterodyne detection; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical interconnections; optical waveguides; photoemission; plasmonics; polaritons; silicon; surface plasmons; Au-Si; SPP; SPP excitation; Schottky-type plasmonic detector; coherent carrier waves; coherent plasmonic interconnection; delayed self-homodyne technique; distance 100 mum; gold film plasmonic waveguide; laser source; metal-oxide-semiconductor field-effect transistors; monolithic integration; optical amplitude-modulated signal transmission; optical beat signal; optical frequency-modulated signal transmission; optical heterodyne detection; optical intensity signal propagation; optical interconnections; photocurrent; plasmonic detector; silicon-based electrical circuit; surface plasmon polaritons; wavelength 1550 nm; Films; Gold; Gratings; Laser beams; Photoconductivity; Plasmons; Silicon; MOSFET; Monolithic integration; Schottky diode; Surface plasmon polariton; metal???oxide???semicondu-ctor field-effect transistor (MOSFET); monolithic integration; optical interconnection; plasmonic waveguide; surface plasmon polariton (SPP);
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/JLT.2015.2395537
  • Filename
    7021924