DocumentCode
36017
Title
Coherent Plasmonic Interconnection in Silicon-Based Electrical Circuit
Author
Aihara, T. ; Sakai, H. ; Takeda, A. ; Okahisa, S. ; Fukuhara, M. ; Ota, M. ; Ishii, Y. ; Fukuda, M.
Author_Institution
Dept. of Electr. & Electr. Inf. Eng., Toyohashi Univ. of Technol., Toyohashi, Japan
Volume
33
Issue
10
fYear
2015
fDate
May15, 15 2015
Firstpage
2139
Lastpage
2145
Abstract
This paper presents a feasibility study of optical interconnections using surface plasmon polaritons (SPPs) as coherent carrier waves in a silicon-based electrical circuit. A gold film plasmonic waveguide and a gold/silicon Schottky-type plasmonic detector were monolithically integrated with an electrical circuit based on metal-oxide-semiconductor field-effect transistors on a silicon substrate. A 1550-nm-band laser source was used for SPP excitation, and the photocurrent generated by the plasmonic detector was amplified 16 000 times by the monolithically integrated electrical circuit after SPPs carrying the optical intensity signal propagated over the gold film surface for a distance of 100 μm. The integrated circuit detected an optical beat signal by using a delayed self-homodyne technique, thus demonstrating that SPPs can be used as coherent carrier waves in the circuit. Additionally, optical amplitude- and frequency-modulated signal transmission in a gold film plasmonic waveguide and optical heterodyne detection by amplification of the signal intensity in a gold/silicon Schottky-type plasmonic detector were also demonstrated.
Keywords
MOSFET; Schottky diodes; elemental semiconductors; gold; heterodyne detection; integrated optics; integrated optoelectronics; monolithic integrated circuits; optical interconnections; optical waveguides; photoemission; plasmonics; polaritons; silicon; surface plasmons; Au-Si; SPP; SPP excitation; Schottky-type plasmonic detector; coherent carrier waves; coherent plasmonic interconnection; delayed self-homodyne technique; distance 100 mum; gold film plasmonic waveguide; laser source; metal-oxide-semiconductor field-effect transistors; monolithic integration; optical amplitude-modulated signal transmission; optical beat signal; optical frequency-modulated signal transmission; optical heterodyne detection; optical intensity signal propagation; optical interconnections; photocurrent; plasmonic detector; silicon-based electrical circuit; surface plasmon polaritons; wavelength 1550 nm; Films; Gold; Gratings; Laser beams; Photoconductivity; Plasmons; Silicon; MOSFET; Monolithic integration; Schottky diode; Surface plasmon polariton; metal???oxide???semicondu-ctor field-effect transistor (MOSFET); monolithic integration; optical interconnection; plasmonic waveguide; surface plasmon polariton (SPP);
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/JLT.2015.2395537
Filename
7021924
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