Title :
Improved Short Channel Effect Control in Bulk FinFETs With Vertical Implantation to Form Self-Aligned Halo and Punch-Through Stop Pocket
Author :
Miao Xu ; Huilong Zhu ; Lichuan Zhao ; Huaxiang Yin ; Jian Zhong ; Junfeng Li ; Chao Zhao ; Dapeng Chen ; Tianchun Ye
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
7/1/2015 12:00:00 AM
Abstract :
In this letter, for the first time, a novel vertical implantation is introduced in bulk FinFETs and used to form self-aligned halo and punch-through stop pocket (PTSP) at the same time. This implantation is carried out after dummy gate removal in the all-last high-k /metal gate process. The formed halo and PTSP doping profiles improve short channel effect control and reduce VTH variation. The process window related to the implantation is also discussed. This vertical implantation method is simple, effective, and has potential for future application of massive manufacture.
Keywords :
MOSFET; doping profiles; high-k dielectric thin films; PTSP doping profiles; all-last high-k-metal gate process; bulk FinFET; dummy gate removal; improved short channel effect control; process window; punch-through stop pocket; self-aligned halo; threshold voltage variation reduction; vertical implantation method; CMOS integrated circuits; Doping profiles; FinFETs; Ions; Logic gates; Semiconductor process modeling; Bulk FinFETs; Halo; Monte Carlo (MC); bulk FinFETs; halo; punch through stop pocket (PTSP);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2434825
