Title :
Low-Frequency Noise and Random Telegraph Noise on Near-Ballistic III-V MOSFETs
Author :
Mengwei Si ; Conrad, Nathan J. ; Sanghoon Shin ; Jiangjiang Gu ; Jingyun Zhang ; Alam, Muhammad Ashraful ; Ye, Peide D.
Author_Institution :
Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Abstract :
In this paper, we report the observation of random telegraph noise (RTN) in highly scaled InGaAs gate-all-around (GAA) MOSFETs fabricated by a top-down approach. RTN and low-frequency noise were systematically studied for devices with various gate dielectrics, channel lengths, and nanowire diameters. Mobility fluctuation is identified to be the source of 1/f noise. The 1/f noise was found to decrease as the channel length scaled down from 80 to 20 nm comparing with classical theory, indicating the near-ballistic transport in highly scaled InGaAs GAA MOSFET. Low-frequency noise in ballistic transistors is discussed theoretically.
Keywords :
1/f noise; III-V semiconductors; MOSFET; ballistic transport; gallium arsenide; indium compounds; semiconductor device noise; 1/f noise; GAA metal oxide semiconductor field effect transistor; InGaAs; RTN; channel length; gate dielectric; low-frequency noise; mobility fluctuation; nanowire diameter; near-ballistic III-V MOSFET; near-ballistic transport; random telegraph noise; 1f noise; Indium gallium arsenide; Logic gates; Low-frequency noise; MOSFET; Ballistic transport; InGaAs; MOSFET; gate-all-around (GAA); low-frequency noise; random telegraph noise (RTN); random telegraph noise (RTN).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2433921
