Title :
Antiferromagnetic Interlayer Exchange Coupling in Ferromagnetic GaMnAs/GaAs:Be Multilayers
Author :
Hakjoon Lee ; Sangyeop Lee ; Seonghoon Choi ; Taehee Yoo ; Sanghoon Lee ; Xinyu Liu ; Furdyna, Jacek K.
Author_Institution :
Dept. of Phys., Korea Univ., Seoul, South Korea
Abstract :
Interlayer exchange coupling (IEC) between the GaMnAs layers in GaMnAs/GaAs:Be multilayer systems has been investigated using magnetotransport experiments. The observation of a stable antiparallel magnetization alignment state from the systems indicates the presence of antiferromagnetic (AFM) IEC between the GaMnAs layers. The transitions between parallel and antiparallel alignments of GaMnAs magnetic layers in the system were carefully investigated by measuring resistance change with increasing temperature under various bias magnetic fields. From the dependence of the transition temperature on bias fields, we have estimated the magnitude of AFM IEC and its temperature behavior of our GaMnAs/GaAs:Be multilayers.
Keywords :
III-V semiconductors; antiferromagnetic materials; beryllium; exchange interactions (electron); ferromagnetic materials; gallium arsenide; magnetic epitaxial layers; magnetic multilayers; magnetic transition temperature; magnetisation; magnetoresistance; manganese compounds; semiconductor epitaxial layers; GaMnAs layers; GaMnAs-GaAs:Be; antiferromagnetic IEC; antiferromagnetic interlayer exchange coupling; antiparallel alignments; bias magnetic fields; ferromagnetic GaMnAs-GaAs:Be multilayers; magnetotransport experiments; parallel alignments; resistance change; stable antiparallel magnetization alignment state; transition temperature; IEC; Magnetic multilayers; Magnetization; Nonhomogeneous media; Resistance; Temperature dependence; Temperature measurement; Interlayer exchange coupling; Interlayer exchange coupling (IEC); Magnetic multilayers; Magnetoresistance; magnetic multilayers; magnetoresistance (MR);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2438294
