• DocumentCode
    3602638
  • Title

    A Monolithic High-Flow Knudsen Pump Using Vertical Al2O3 Channels in SOI

  • Author

    Seungdo An ; Yutao Qin ; Gianchandani, Yogesh B.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
  • Volume
    24
  • Issue
    5
  • fYear
    2015
  • Firstpage
    1606
  • Lastpage
    1615
  • Abstract
    This paper describes the analysis, design, and microfabrication of a Knudsen pump for high flow generation. The Knudsen pump generates gas streams from the cold end to the hot end using free-molecular flow without moving parts. The designed Knudsen pump has densely arrayed vertically oriented 2-μm wide rectangular channels for providing high flow. The temperature gradient is provided between a thin-film metal heater and a gridded Si heat sink in the Knudsen pump structure. The Knudsen pump is fabricated on a single silicon-on-insulator wafer using a four-mask lithographic process. The sidewalls of the rectangular channels are constructed by atomic layer deposition of Al2O3 on sacrificial Si channels and subsequent Si etching. The fabricated Knudsen pumps have designed footprints ranging from 0.4-3.2 cm2. At atmospheric pressure, the fabricated Knudsen pumps provide a maximum measured air flow rate of >200 sccm with response time of <;0.5 s. Experimental results have also shown that these Knudsen pumps are most suitable for pumping at moderate vacuum pressure of ≈200 Torr (27 kPa).
  • Keywords
    Knudsen flow; alumina; atomic layer deposition; etching; heat sinks; heat transfer; lithography; microchannel flow; microfabrication; micropumps; silicon; silicon-on-insulator; thin film devices; Al2O3; Knudsen pump structure; SOI; Si; air flow rate; atmospheric pressure; atomic layer deposition; four-mask lithographic process; free-molecular flow; gas streams; gridded Si heat sink; high flow generation; monolithic high-flow Knudsen pump; pressure 1 atm; pressure 27 kPa; rectangular channels; response time; sacrificial Si channels; single silicon-on-insulator wafer; size 2 mum; subsequent Si etching; temperature gradient; thin-film metal heater; vacuum pressure; vertical alumina channels; Aluminum oxide; Dielectrics; Etching; Heat pumps; Heat sinks; Silicon; Temperature distribution; Thermal transpiration; chromatography; chromatography.; gas; vacuum;
  • fLanguage
    English
  • Journal_Title
    Microelectromechanical Systems, Journal of
  • Publisher
    ieee
  • ISSN
    1057-7157
  • Type

    jour

  • DOI
    10.1109/JMEMS.2015.2426699
  • Filename
    7115024