DocumentCode
3602678
Title
Anisotropic Magnetoresistance Effect in Co2(Fe–Mn)(Al–Si) Heusler Alloy Thin Film
Author
Yako, Hitomi ; Kubota, Takahide ; Takanashi, Koki
Author_Institution
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Volume
51
Issue
11
fYear
2015
Firstpage
1
Lastpage
3
Abstract
The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.
Keywords
aluminium alloys; band structure; cobalt alloys; enhanced magnetoresistance; epitaxial growth; iron alloys; magnetic epitaxial layers; manganese alloys; metallic epitaxial layers; silicon alloys; sputter deposition; AMR ratio; CFMAS film; Co2FeMnAlSi; L21 ordering; MgO; MgO (100) single crystal substrate; anisotropic magnetoresistance effect; epitaxially grown cobalt-based Heusler alloy thin film; giant MR junctions; half-metallic electronic structure; spintronic devices; Epitaxial growth; Magnetic field measurement; Magnetoresistance; Metals; Substrates; Temperature measurement; Anisotropic magnetoresistance (AMR) effect; Half-metal; Heusler alloy; half-metal;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2015.2439284
Filename
7115152
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