Title :
Anisotropic Magnetoresistance Effect in Co2(Fe–Mn)(Al–Si) Heusler Alloy Thin Film
Author :
Yako, Hitomi ; Kubota, Takahide ; Takanashi, Koki
Author_Institution :
Inst. for Mater. Res., Tohoku Univ., Sendai, Japan
Abstract :
The anisotropic magnetoresistance (AMR) effect was investigated in epitaxially grown cobalt-based Heusler thin films of Co2(Fe-Mn)Si, Co2(Fe-Mn)(Al-Si) (CFMAS), and Co2(Fe-Mn)Al. Films were successfully fabricated onto MgO (100) single crystal substrate with an L21 ordering. The signs of the AMR ratio were negative for all the samples in this paper, which implies a possibility of half-metallic electronic structure. The maximum value of AMR ratio for the CFMAS film was -0.19% at 10 K, which is comparable with the earlier works on half-metallic Heusler alloys thin films. Our results propose that the CFMAS is also a good candidate for the spintronic devices, such as giant MR junctions.
Keywords :
aluminium alloys; band structure; cobalt alloys; enhanced magnetoresistance; epitaxial growth; iron alloys; magnetic epitaxial layers; manganese alloys; metallic epitaxial layers; silicon alloys; sputter deposition; AMR ratio; CFMAS film; Co2FeMnAlSi; L21 ordering; MgO; MgO (100) single crystal substrate; anisotropic magnetoresistance effect; epitaxially grown cobalt-based Heusler alloy thin film; giant MR junctions; half-metallic electronic structure; spintronic devices; Epitaxial growth; Magnetic field measurement; Magnetoresistance; Metals; Substrates; Temperature measurement; Anisotropic magnetoresistance (AMR) effect; Half-metal; Heusler alloy; half-metal;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2439284
