Title :
Electric-Field-Controlled Room Temperature AMR Switching in a NiFe/BiFeO3/SrRuO3/SrTiO3 (111) Heterostructure
Author :
Shizhe Wu ; Jun Miao ; Yong Wu ; Kangkang Meng ; Xiaoguang Xu ; Yong Jiang
Author_Institution :
Sch. of Mater. Sci. & Eng., Univ. of Sci. & Technol. Beijing, Beijing, China
Abstract :
Ta/NiFe/BiFeO3 (BFO)/SrRuO3/SrTiO3 (111) heterostructure has been fabricated by pulsed laser deposition and magnetic sputtering. The BFO film is pure and highly (111)-oriented. A typical anisotropic magnetoresistance (AMR) effect has been observed by four probes technique at room temperature. When applying an out-of-plane electric field, remarkable reverses of the AMR phase have been observed several times from about -0.015% to about 0.015% in our experiment. These results indicate that a reversible out-of-plane electric field control of magnetization in ferromagnetic layer could be achieved through multiferroic BFO at room temperature.
Keywords :
bismuth compounds; enhanced magnetoresistance; ferromagnetic materials; iron alloys; magnetic multilayers; magnetic switching; magnetisation; multiferroics; nickel alloys; pulsed laser deposition; sputter deposition; strontium compounds; tantalum; Ta-NiFe-BiFeO3-SrRuO3-SrTiO3; anisotropic magnetoresistance effect; electric-field-controlled AMR switching; ferromagnetic layer; four probes technique; magnetic sputtering; multiferroic; pulsed laser deposition; reversible out-of-plane electric field magnetization control; temperature 293 K to 298 K; Electric fields; Films; Magnetic domain walls; Magnetic domains; Perpendicular magnetic anisotropy; Switches; Anisotropic Magnetoresistance; Anisotropic magnetoresistance (AMR); BiFeO3; BiFeO3 (BFO); Domain Walls; Electric-Field-Control; domain walls; electric field control.;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2015.2441831
