DocumentCode :
3602853
Title :
Anisotropic AC Magnetic Susceptibility in (Ga,Mn)As Films
Author :
Xiang Li ; Sining Dong ; Taehee Yoo ; Xinyu Liu ; Sanghoon Lee ; Furdyna, Jacek K. ; Dobrowolska, Margaret
Author_Institution :
Dept. of Phys., Univ. of Notre Dame, Notre Dame, IN, USA
Volume :
51
Issue :
11
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
We report a systematic investigation of ac magnetic susceptibility in (Ga,Mn)As films as a function of temperature and magnetic field, carried out in parallel with dc magnetization measurements. The temperature dependence of ac susceptibility χac shows anisotropic behavior: 1) a single peak in χac is observed close to T for the [11̅0] orientation of the driving ac field; 2) a single peak is also seen close to 22 K for the field along [110]; and 3) peaks at both these temperatures are observed for the field applied along [100]. A detailed analysis of the ac and dc data unambiguously indicates that the peak near T is related to the paramagnetic-to-ferromagnetic phase transition, with the ferromagnetic domains nucleating with their easy axes aligned with the [11̅0] direction, providing a clear picture of uniaxial domain behavior near T . The peak near 22 K, on the other hand, is related to the onset of biaxial domain structure in (Ga,Mn)As induced by the competition between uniaxial and cubic anisotropy. More specifically, the ac susceptibility peak near TC involves 180° magnetization flips along the [11̅0] easy axis of the domains, while the peak near 22 K originates from magnetization wobbling between two biaxial easy axes separated by a small angle.
Keywords :
III-V semiconductors; ferromagnetic materials; ferromagnetic-paramagnetic transitions; gallium arsenide; magnetic anisotropy; magnetic domains; magnetic semiconductors; magnetic susceptibility; magnetic thin films; manganese compounds; nucleation; semiconductor thin films; (GaMn)As; (GaMn)As films; [11̅0] orientation; anisotropic AC magnetic susceptibility; biaxial domain structure; cubic anisotropy; dc magnetization measurements; ferromagnetic domains; ferromagnetic semiconductor; magnetic field; magnetization flips; magnetization wobbling; nucleation; paramagnetic-ferromagnetic phase transition; temperature dependence; temperature field; uniaxial domain behavior; Films; Magnetic anisotropy; Magnetic field measurement; Magnetic hysteresis; Magnetic susceptibility; Magnetization; Temperature measurement; Ferromagnetic semiconductors; magnetic anisotropy; magnetic domains; magnetic domains and magnetic susceptibility; magnetic susceptibility;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2015.2442513
Filename :
7118705
Link To Document :
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