DocumentCode :
3602882
Title :
Author :
Huang, Efrem Y. ; Kryder, Mark H.
Author_Institution :
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume :
51
Issue :
11
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Processes for the sputter deposition of L10-ordered τ-phase MnAl thin films using conductive TiN underlayers on Si substrates have been developed. Deposition parameters were systematically varied and resulting films were characterized in terms of structural and magnetic properties. Fabricated films demonstrated strong (001) texture and high perpendicular magnetic anisotropy, with an out-of-plane coercivity Hc of up to 12 kOe, an anisotropy constant Ku of 1.0 × 107 erg/cm3, a saturation magnetization Ms of 250 emu/cm3, and a squareness Mr/Ms of 0.9.
Keywords :
aluminium alloys; coercive force; magnetic hysteresis; magnetic thin films; manganese alloys; metallic thin films; perpendicular magnetic anisotropy; sputter deposition; texture; titanium compounds; (001) texture; L10-ordered τ-phase MnAl thin films; MnAl-TiN; Si; Si substrates; anisotropy constant; conductive TiN underlayers; deposition parameters; high-perpendicular magnetic anisotropy; magnetic properties; out-of-plane coercivity; saturation magnetization; sputter deposition; squareness; structural properties; Annealing; Films; Perpendicular magnetic anisotropy; Saturation magnetization; Silicon; Substrates; Tin; $L1_{0}$ -ordered thin films; L10-ordered thin films; MnAl; TiN underlayer; perpendicular magnetic anisotropy; perpendicular magnetic anisotropy (PMA);
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2015.2442574
Filename :
7119575
Link To Document :
