Polycrystalline CPP-GMR Pseudospin Valves Using Textured Co2Fe(Ga0.5Ge0.5) Layer Grown on a Conductive (Mg0.5Ti<

We report the magnetotransport properties and the microstructure of polycrystalline current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) pseudospin valves (PSVs) using (001) textured Co₂Fe(Ga_0.5Ge_0.5) (CFGG) ferromagnetic layers grown on a conductive (Mg_0.5Ti_0.5)O (MTO) buffer layer. The PSV with a 10 nm CFGG on 2 nm MTO buffer layers annealed at 400°C shows a resistance change-area (Δ R A) product of 6.6 mΩ μm². Interfacial roughness of the PSV multilayer has been substantially reduced (0.2 nm) compared with those of our previously reported MgO-buffered CFGG/Ag/CFGG PSVs. A relatively large magnetoresistance output and favorable interfacial smoothness make MTO a promising choice to fabricate a (001) textured Heusler-alloy-based CPP-GMR device.