• DocumentCode
    36030
  • Title

    Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU

  • Author

    Clarke, Ryan ; Jacob, Philip ; Erdogan, Okan ; Belemijian, Paul ; Raman, Srikumar ; LeRoy, Mitchell R. ; Neogi, Tuhin Guha ; Kraft, Russell P. ; Borca-Tasciuc, Diana-Andra ; McDonald, John F.

  • Author_Institution
    Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
  • Volume
    3
  • fYear
    2015
  • fDate
    2015
  • Firstpage
    43
  • Lastpage
    54
  • Abstract
    We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (>24 GHz), there are concerns with removing heat from the 3-D stack. We propose the use of thin diamond sheets, which have high thermal conductivity, as a heat spreader by bonding it close to the processor core substrate and memory stacks. We show, through thermal modeling using COMSOL finite-element analysis tools, the feasibility of diamond as an effective heat spreader in a processor-memory 3-D stack.
  • Keywords
    BiCMOS digital integrated circuits; DRAM chips; Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; thermal conductivity; 3D stacked DRAM; COMSOL finite-element analysis tools; HBT BiCMOS CPU; SiGe; heat spreader; memory stacks; processor core substrate; serial code accelerator core; thermal conductivity; thermal modeling; thin diamond sheets; Conductivity; DRAM chips; Diamonds; Heating; Memory; Microprocessors; Moore´s Law; Simulation; Thermal conductivity; Three-dimensional displays; 3D IC; Memory; Microprocessors; Modeling; Moore’s Law; Moore???s law; Simulation; memory; modeling; simulation; thermal analysis; thermal management;
  • fLanguage
    English
  • Journal_Title
    Access, IEEE
  • Publisher
    ieee
  • ISSN
    2169-3536
  • Type

    jour

  • DOI
    10.1109/ACCESS.2015.2396474
  • Filename
    7021925