DocumentCode
36030
Title
Thermal Modeling of 3-D Stacked DRAM Over SiGe HBT BiCMOS CPU
Author
Clarke, Ryan ; Jacob, Philip ; Erdogan, Okan ; Belemijian, Paul ; Raman, Srikumar ; LeRoy, Mitchell R. ; Neogi, Tuhin Guha ; Kraft, Russell P. ; Borca-Tasciuc, Diana-Andra ; McDonald, John F.
Author_Institution
Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA
Volume
3
fYear
2015
fDate
2015
Firstpage
43
Lastpage
54
Abstract
We have previously evaluated the feasibility of a serial code accelerator core with 3-D DRAM stacked on the core operating at high frequencies. While operating at such high frequencies (>24 GHz), there are concerns with removing heat from the 3-D stack. We propose the use of thin diamond sheets, which have high thermal conductivity, as a heat spreader by bonding it close to the processor core substrate and memory stacks. We show, through thermal modeling using COMSOL finite-element analysis tools, the feasibility of diamond as an effective heat spreader in a processor-memory 3-D stack.
Keywords
BiCMOS digital integrated circuits; DRAM chips; Ge-Si alloys; finite element analysis; heterojunction bipolar transistors; thermal conductivity; 3D stacked DRAM; COMSOL finite-element analysis tools; HBT BiCMOS CPU; SiGe; heat spreader; memory stacks; processor core substrate; serial code accelerator core; thermal conductivity; thermal modeling; thin diamond sheets; Conductivity; DRAM chips; Diamonds; Heating; Memory; Microprocessors; Moore´s Law; Simulation; Thermal conductivity; Three-dimensional displays; 3D IC; Memory; Microprocessors; Modeling; Moore’s Law; Moore???s law; Simulation; memory; modeling; simulation; thermal analysis; thermal management;
fLanguage
English
Journal_Title
Access, IEEE
Publisher
ieee
ISSN
2169-3536
Type
jour
DOI
10.1109/ACCESS.2015.2396474
Filename
7021925
Link To Document