• DocumentCode
    3603610
  • Title

    A 220-MS/s 9-Bit 2X Time-Interleaved SAR ADC With a 133-fF Input Capacitance and a FOM of 37 fJ/conv in 65-nm CMOS

  • Author

    Palani, Rakesh Kumar ; Harjani, Ramesh

  • Author_Institution
    Univ. of Minnesota, Minneapolis, MN, USA
  • Volume
    62
  • Issue
    11
  • fYear
    2015
  • Firstpage
    1053
  • Lastpage
    1057
  • Abstract
    This brief presents a 9-bit 2X time-interleaved successive approximation (SAR) analog-to-digital converter (ADC) for high-speed applications. The proposed ADC fabricated in TSMC´s 65-nm general-purpose process occupies an area of 0.0338 mm2 and consists of two time-interleaved channels, each operating at 110 MS/s. The sampling capacitor is separated from the capacitive DAC array by performing the input and DAC reference subtraction in the current domain rather than as done traditionally in the charge domain. This allows for an extremely small input capacitance of 133 fF. The measured ADC SFDR is 57 dB and the measured ENOB is 7.55 bits at Nyquist rate while using 1.55-mW power from a 1-V supply.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; high-speed integrated circuits; integrated circuit manufacture; ADC; CMOS; FOM; Nyquist rate; analog-to-digital converter; capacitance 133 fF; power 1.55 mW; sampling capacitor; size 65 nm; time-interleaved successive approximation; voltage 1 V; word length 7.55 bit; word length 9 bit; Arrays; Capacitance; Capacitors; Circuits and systems; Inverters; Linearity; Switches; Analog-to-digital converter; Analog-to-digital converter (ADC); drivers; gate leakage; gate-leakage; preamp; successive approximation register; time interleaving; time-interleavin;
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2015.2455431
  • Filename
    7154416